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Updated: Oct 15, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Modelling local structural and electronic consequences of proton and hydrogen-atom uptake in VO2 with polyoxovanadate
Sourav Chakraborty1, Eric Schreiber1, Karla R Sanchez-Lievanos1
1Department of Chemistry, University of Rochester Rochester NY 14627 USA matson@chem.rochester.edu.
Abstract:
We report the synthesis and characterisation of a series of siloxide-functionalised polyoxovanadate-alkoxide (POV-alkoxide) clusters, [V6O6(OSiMe3)(OMe)12] (n = 1-, 2-), that serve as molecular models for proton and hydrogen-atom uptake in vanadium dioxide, respectively. Installation of a siloxide moiety on the surface of the Lindqvist core was accomplished via addition of trimethylsilyl trifluoromethylsulfonate to the fully-oxygenated cluster [V6O7(OMe)12]2-. Characterisation of [V6O6(OSiMe3)(OMe)12]1- by X-ray photoelectron spectroscopy reveals that the incorporation of the siloxide group does not result in charge separation within the hexavanadate assembly, an observation that contrasts directly with the behavior of clusters bearing substitutional dopants. The reduced assembly, [V6O6(OSiMe3)(OMe)12]2-, provides an isoelectronic model for H-doped VO2, with a vanadium(iii) ion embedded within the cluster core. Notably, structural analysis of [V6O6(OSiMe3)(OMe)12]2- reveals bond perturbations at the siloxide-functionalised vanadium centre that resemble those invoked upon H-atom uptake in VO2 through ab initio calculations. Our results offer atomically precise insight into the local structural and electronic consequences of the installation of hydrogen-atom-like dopants in VO2, and challenge current perspectives of the operative mechanism of electron-proton co-doping in these materials.
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