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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

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Carbon Nanotubes for Radiation-Tolerant Electronics.

Pritpal S Kanhaiya¹, Andrew Yu¹, Richard Netzer²

¹Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.

|October 27, 2021

Summary

Engineered carbon nanotube field-effect transistors (CNFETs) achieve record radiation tolerance for space electronics. This breakthrough enhances the longevity and reliability of electronics in demanding space environments.

Keywords:

SRAM carbon nanotube field-effect transistor radiation-tolerant total ionizing dose transient upset

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Area of Science:

Materials Science
Electrical Engineering
Aerospace Engineering

Background:

Space electronics face degradation from cosmic radiation, limiting mission lifespans.
Increasingly ambitious space missions require more radiation-tolerant electronic components.

Purpose of the Study:

To engineer carbon nanotube field-effect transistors (CNFETs) for enhanced radiation tolerance.
To demonstrate the potential of CNFETs for next-generation space applications.

Main Methods:

Optimized CNFET device geometries using low-temperature fabrication.
Leveraged both extrinsic (geometry) and intrinsic (material) CNFET properties.
Performed total ionizing dose (TID) and X-ray prompt dose testing on CNFETs and CNFET-based SRAM.

Main Results:

Achieved record CNFET total ionizing dose (TID) tolerance above 10 Mrad(Si).
Demonstrated transient upset testing on complementary metal-oxide-semiconductor (CMOS) CNFET-based 6T SRAM memories.
Established a threshold dose rate of 1.3 × 10^10 rad(Si)/s for prompt dose testing.

Conclusions:

CNFETs can be strategically engineered for robust radiation tolerance.
CNFETs offer a promising technology for future space electronics.
Optimized CNFETs can meet the stringent demands of long-duration space missions.