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In Situ Perovskitoid Engineering at SnO2 Interface toward Highly Efficient and Stable Formamidinium Lead Triiodide
Yuquan Ai1, Yang Zhang1, Jing Song1
1State Key Laboratory of Optoelectronic Materials and Technology, Guangdong Provincial Key Laboratory of Low Carbon Chemistry and Process Energy Conservation, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China.
Abstract:
The black-phase formamidinium lead triiodide (α-FAPbI3) perovskite has turned out to be one of the most efficient light harvesting materials. However, the phase stability of FAPbI3 is a long-standing issue. Herein, we introduce a layer of tetrabutylammonium fluoride (TBAF) on SnO2, which would form an in situ layer of TBAPbI3 perovskitoid at the SnO2/FAPbI3 interface by interacting with PbI2. The results show that this strategy could improve the conductivity of SnO2, passivate the defects in perovskite, improve the phase stability of α-FAPbI3, and retard the nonradiative recombination in the device. As a result, we obtain a champion device with a power conversion efficiency of 23.1% under AM 1.5 G illumination of 100 mW/cm2. The unencapsulated devices can maintain excellent stability under illumination, thermal stress, and humidity conditions, respectively.
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