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Updated: Oct 15, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Optoelectronic Memory Capacitor Based on Manipulation of Ferroelectric Properties
Pejman Ghasemi1, Mohammad Javad Sharifi1
1Faculty of Electrical Engineering, Shahid Beheshti University, G.C., P.O. Box, 198396-9411 Tehran, Iran.
Abstract:
Here, we report on the fabrication of an optoelectronic memcapacitor (memory capacitor) by manipulation of ferroelectric properties through the ferroelectric-semiconductor interface based on a ZnO/PZT (Pb1.1(Zr0.52Ti0.48)O3) capacitor. A ZnO layer was deposited on PZT by the chemical vapor deposition method to achieve the memcapacitive effect. The capacitance-voltage and time-dependent capacitance characteristics of the Al/ZnO/PZT/Al memcapacitor were used as the main outcome measurement. In an asymmetric PZT structure with a ZnO layer, two stable states in the capacitance were obtained, which can be written by either optical or electrical pulses. In addition, the illuminated capacitive characters of the device showed a photovoltaic effect that is sensitive to wavelengths and can be used for nondestructive readout. Thus, this work proposes a low-cost structure solid-state memcapacitor exhibiting the promising potential for memory and computation applications with the ability to program and readout by electrical or optical signals.
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