Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO₃/LaNiO₃/LaAlO₃ heterostructure

An unusually large thermopower (S) enhancement is induced by heterostructuring thin films of the strongly correlated electron oxide LaNiO₃. The phonon-drag effect, which is not observed in bulk LaNiO₃, enhances S for thin films compressively strained by LaAlO₃ substrates. By a reduction in the layer thickness down to three unit cells and subsequent LaAlO₃ surface termination, a 10 times S enhancement over the bulk value is observed due to large phonon drag S (S_g), and the S_g contribution to the total S occurs over a much wider temperature range up to 220 K. The S_g enhancement originates from the coupling of lattice vibration to the d electrons with large effective mass in the compressively strained ultrathin LaNiO₃, and the electron-phonon interaction is largely enhanced by the phonon leakage from the LaAlO₃ substrate and the capping layer. The transition-metal oxide heterostructures emerge as a new playground to manipulate electronic and phononic properties in the quest for high-performance thermoelectrics.