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Point Defects in Two-Dimensional Indium Selenide as Tunable Single-Photon Sources.
Mattia Salomone1, Michele Re Fiorentin2, Giancarlo Cicero1
1Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino, Italy.
The Journal of Physical Chemistry Letters
|November 4, 2021
Summary
Researchers explored Indium Selenide (InSe) monolayers as potential single-photon emitters (SPEs). Defects, particularly Germanium substitution, create electronic states enabling near-infrared light emission, crucial for quantum technology.
Area of Science:
- Materials Science
- Quantum Technology
- Condensed Matter Physics
Background:
- Nonclassical light sources and single-photon emitters (SPEs) are vital for optical quantum technology.
- Developing new materials for SPEs is an active area of research.
Purpose of the Study:
- To investigate the potential of Indium Selenide (InSe) monolayers as single-photon emitters (SPEs).
- To analyze the electronic and optical properties of InSe with point defects.
Main Methods:
- Computational analysis of InSe monolayer stability and electronic properties.
- Simulations using GW-corrected electronic states and the Bethe-Salpeter equation.
- Investigating substitutional defects with Group IV, V, and VI atoms, focusing on Germanium (Ge) in Selenium (Se) sites.
Main Results:
- Point defects, specifically substitutional Group IV, V, and VI atoms, introduce deep defect states within the InSe band gap.
- Germanium substitution for Selenium creates defect states enabling optical transitions.
- These transitions result in a strong absorption and spontaneous emission spectrum in the near-infrared region.
- The electronic states involved in these transitions are highly localized.
Conclusions:
- InSe monolayers with specific point defects exhibit promising properties for single-photon emission.
- The observed near-infrared emission and localized states make InSe a potential candidate for novel SPE materials in quantum applications.
