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Updated: Oct 14, 2025

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films
Published on: August 19, 2016
A practical method for determining film thickness using X-ray absorption spectroscopy in total electron yield mode
Noritake Isomura1, Keiichiro Oh-Ishi1, Naoko Takahashi1
1Toyota Central R&D Laboratories Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan.
Abstract:
Thin films formed on surfaces have a large impact on the properties of materials and devices. In this study, a method is proposed using X-ray absorption spectroscopy to derive the film thickness of a thin film formed on a substrate using the spectral separation and logarithmic equation, which is a modified version of the formula used in electron spectroscopy. In the equation, the decay length in X-ray absorption spectroscopy is longer than in electron spectroscopy due to a cascade of inelastic scattering of electrons generated in a solid. The modification factor, representing a multiple of the decay length, was experimentally determined using oxidized Si and Cu with films of thickness 19 nm and 39 nm, respectively. The validity of the proposed method was verified, and the results indicated that the method can be used in the analysis of various materials with thin films.
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