Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Mechanisms of Membrane-bending01:15

Mechanisms of Membrane-bending

3.0K
The living membranes are flexible due to their fluid mosaic nature; however, their bending into different shapes is an active process regulated by specific lipids and proteins. The membrane bending can be transient as seen in vesicles or stable for a long time as in microvilli. Cells regulate the size, location, and duration of the membrane curvature.
Membrane bending can happen due to intrinsic changes in lipid composition or extrinsic association with different proteins. The proteins involved...
3.0K
Potentiometry: Membrane Electrodes01:15

Potentiometry: Membrane Electrodes

869
Membrane electrodes, also known as p-ion electrodes, use membranes that selectively interact with free analyte ions, generating a potential difference across the membrane. The resulting membrane potential, known as the asymmetry potential, is not zero even when analyte concentrations on both sides of the membrane are equal. The membrane's response is typically not selective to a single analyte but proportional to the concentration of all ions in the sample solution capable of interacting at...
869
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

561
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
561
Magnetic Damping01:17

Magnetic Damping

620
Eddy currents can produce significant drag on motion, called magnetic damping. For instance, when a metallic pendulum bob swings between the poles of a strong magnet, significant drag acts on the bob as it enters and leaves the field, quickly damping the motion.
If, however, the bob is a slotted metal plate, the magnet produces a much smaller effect. When a slotted metal plate enters the field, an emf is induced by the change in flux; however, it is less effective because the slots limit the...
620
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

363
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
363
Ferromagnetism01:31

Ferromagnetism

2.5K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.5K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Machine Learning Enabled Graph Analysis of Particulate Composites: Application to Solid-State Battery Cathodes.

ACS energy letters·2026
Same author

Prepatterned Superconducting Contacts for Clean Superconductor-Topological Material Interfaces Enabling Long-Range Josephson Coupling.

Nano letters·2026
Same author

Decoding THz-Driven Dynamic Fingerprints of Ferroelectric Nanotwin Networks.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Author Correction: Magnon confinement in epitaxial antiferromagnetic oxide heterostructures.

Nature materials·2026
Same author

Vacancy-Induced Z-Contrast Anomaly in Self-Assembled (Ti,V)O<sub>2</sub> Heterostructure.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Strain and Defect-Tailored Magnetotransport in NiCo<sub>2</sub>O<sub>4</sub> Thin Films and Freestanding Membranes.

ACS nano·2026

Related Experiment Video

Updated: Oct 13, 2025

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
07:03

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

8.9K

Low-voltage magnetoelectric coupling in membrane heterostructures.

Shane Lindemann1, Julian Irwin2, Gi-Yeop Kim3

  • 1Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.

Science Advances
|November 12, 2021
PubMed
Summary

Researchers achieved low-voltage magnetoelectric coupling in novel membrane heterostructures. By removing ferroelectric PMN-PT films from substrates, they enabled efficient strain control of magnetic properties for advanced devices.

More Related Videos

Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques
06:27

Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

Published on: July 2, 2018

8.3K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.4K

Related Experiment Videos

Last Updated: Oct 13, 2025

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
07:03

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

8.9K
Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques
06:27

Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

Published on: July 2, 2018

8.3K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.4K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE)/ferromagnetic (FM) heterostructures is key for multifunctional devices.
  • Relaxor-ferroelectrics like PMN-PT offer giant piezoelectricity but are limited by substrate clamping in thin films.
  • Overcoming substrate clamping is crucial for realizing the full potential of PMN-PT in ME devices.

Purpose of the Study:

  • To demonstrate low-voltage ME coupling in an all-thin-film heterostructure using anisotropic strains.
  • To investigate the effect of substrate removal on the piezoelectric response of PMN-PT thin films.
  • To develop a novel membrane heterostructure for efficient strain-mediated magnetic control.

Main Methods:

  • Fabrication of membrane ferroelectric/ferromagnetic (PMN-PT/Ni) heterostructures.
  • Utilizing the anisotropic strain properties of (011)-oriented PMN-PT films.
  • Employing scanning transmission electron microscopy and phase-field simulations to analyze film behavior.

Main Results:

  • Achieved 90° Ni magnetization rotation with a low 3 V bias in membrane PMN-PT/Ni heterostructures.
  • Demonstrated significantly reduced voltage requirement compared to bulk PMN-PT.
  • Confirmed the effectiveness of substrate removal in enhancing piezoelectric strain and ME coupling.

Conclusions:

  • Substrate-free, (011)-oriented PMN-PT thin films enable efficient low-voltage magnetoelectric coupling.
  • Membrane heterostructures offer a promising pathway for advanced piezo-driven ME devices.
  • Understanding microstructural behavior is vital for optimizing PMN-PT thin films in ME applications.