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Related Experiment Video

Updated: Oct 13, 2025

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
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High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process.

Nam Woon Kim1, Hyeonjeong Choe2, Muhammad Ali Shah1

  • 1Department of Nature-Inspired System and Application, Korea Institute of Machinery and Materials, Daejeon 34103, Korea.

Polymers
|November 13, 2021
PubMed
Summary

Optimizing divinylsiloxane-bis-benzocyclobutene (DVS-BCB) bonding requires specific conditions. Void-free DVS-BCB bonding is achieved with a compressive pressure of 0.6 N/mm², vacuum, and 250 °C curing, enhancing semiconductor packaging.

Keywords:
DVS-BCB bondingDVS-BCB bonding mechanismadhesivepressure conditionvoid-free DVS-BCB bonding

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Area of Science:

  • Materials Science
  • Chemical Engineering
  • Semiconductor Manufacturing

Background:

  • Divinylsiloxane-bis-benzocyclobutene (DVS-BCB) is a promising intermediate bonding material.
  • Current applications are limited by high curing temperatures and unoptimized compressive pressure, causing device damage.
  • Optimizing DVS-BCB bonding is crucial for advanced semiconductor and device packaging.

Purpose of the Study:

  • To determine optimal compressive pressure conditions for void-free DVS-BCB bonding.
  • To investigate the relationship between bonding parameters and material properties.
  • To establish a reliable process for high-quality DVS-BCB interconnections.

Main Methods:

  • Investigated DVS-BCB bonding under various compressive pressures at 250 °C.
  • Utilized near-infrared confocal laser microscopy and Fourier-transform infrared microscopy to assess voids and crosslinking density.
  • Evaluated adhesion strength using a universal testing machine.

Main Results:

  • Void-free DVS-BCB bonding was achieved at a compressive pressure of 0.6 N/mm² under vacuum (0.03 Torr) and 250 °C for 1 hour.
  • High crosslinking density and good adhesion were observed at the optimized compressive pressure.
  • The study identified void formation and crosslinking density as key factors in bonding quality.

Conclusions:

  • The optimized process using 0.6 N/mm² compressive pressure yields void-free DVS-BCB bonding with high adhesion.
  • This optimized process is significant for improving semiconductor and device packaging technologies.
  • Further research can explore other parameters to enhance DVS-BCB performance.