Related Experiment Video

Updated: Oct 13, 2025

Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis
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Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis

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The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

Szymon Łoś1, Kazimierz Fabisiak2, Kazimierz Paprocki3

  • 1Institute of Mathematics and Physics, Bydgoszcz University of Science and Technology, Profesora Sylwestra Kaliskiego 7, 85796 Bydgoszcz, Poland.

Materials (Basel, Switzerland)
|November 13, 2021
PubMed

Keywords:
CVD diamondJ-V/T characteristicRaman spectroscopySEMhydrogenationp-diamond/n-Si heterojunction

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