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Related Concept Videos

Ferromagnetism01:31

Ferromagnetism

2.5K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.5K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

363
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
363
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
561
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.1K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.1K
P-N junction01:11

P-N junction

748
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
748
Magnetic Force Between Two Parallel Currents01:13

Magnetic Force Between Two Parallel Currents

3.7K
Two long, straight, and parallel current-carrying conductors exert a force of equal magnitude on one another. The direction of the force depends on the current direction in the conductors.
The force exerted by the magnetic field due to the first conductor over a finite length of the second conductor is given as the product of the current in the second conductor and  the vector product of the length vector along the current element and the field due to the first conductor. According to the...
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Updated: Oct 13, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

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Van der Waals ferromagnetic Josephson junctions.

Linfeng Ai1,2, Enze Zhang1, Jinshan Yang3

  • 1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.

Nature Communications
|November 13, 2021
PubMed
Summary
This summary is machine-generated.

We created a van der Waals heterostructure Josephson junction using a ferromagnetic insulator and a superconductor. This breakthrough enables new possibilities for superconducting circuits and sensitive magnetic probes.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Superconductor-ferromagnet interfaces are crucial for understanding quantum phenomena.
  • Creating atomically sharp interfaces in 2D van der Waals (vdW) heterostructures is challenging.
  • Exploring superconductivity and ferromagnetism interplay in nanoscale devices is a key research area.

Purpose of the Study:

  • To construct a van der Waals (vdW) ferromagnetic Josephson junction (JJ).
  • To investigate the interplay between superconductivity and ferromagnetism in vdW heterostructures.
  • To explore potential applications in superconducting circuits and magnetic sensing.

Main Methods:

  • Fabrication of a vdW heterostructure by inserting ferromagnetic insulator Cr2Ge2Te6 between two layers of superconductor NbSe2.
  • Characterization of the Josephson junction's critical current and resistance.
  • Measurement of device response to in-plane magnetic fields and analysis of SQUID structures.

Main Results:

  • Observed hysteretic and oscillatory behavior of critical current and junction resistance with magnetic fields, indicating strong Josephson coupling.
  • Detected a central minimum in critical current in some devices.
  • Observed nontrivial phase shifts in SQUID structures, demonstrating the coexistence of 0 and π phases.

Conclusions:

  • Successfully built a vdW ferromagnetic Josephson junction with tunable properties.
  • Demonstrated the coexistence of 0 and π phases, opening avenues for novel superconducting devices.
  • Highlighted the potential of vdW heterostructures as sensitive probes for weak magnetism and building blocks for advanced superconducting circuits.