Related Experiment Video
Updated: Oct 13, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Tuning Magnetic Anisotropy in Two-Dimensional Metal-Semiconductor Janus van der Waals Heterostructures
Arkamita Bandyopadhyay1, Cihan Bacaksiz1, Junjie He1,2
1Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, 28359 Bremen, Germany.
Abstract:
In the family of 2D materials, atomically thin magnetic systems are relatively new and highly exploitable. Understanding the spin symmetry in such materials has opened a new path toward controlling the magnetic texture. In this study, we have shown that the plethora of different interface formations in the Janus or pure metal-semiconductor-based van der Waals heterostructures 1T-VXY (X, Y = S, Se, Te)-Cr2A3B3 (A, B = I, Cl, Br) allows us to explore and modify the spin-orbit and ligand-metal interactions to fine-tune magnetic anisotropy and different spin symmetries in these systems. We have utilized the interlayer interactions to modulate spin-orbit coupling (SOC) in heterolayers to regulate the magnetic anisotropy in such systems. We have compared systems with the same compositions and different interfaces, for example, Janus VSTe-Janus Cr2I3Br3 and Janus VTeS-Janus Cr2I3Br3, to show that the first one is an Ising ferromagnet, whereas the second one is an XY ferromagnet because of the SOC effect of the heavy ligand atoms.
More Related Videos
13:56Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Ferromagnetism
Magnetic Field Due To A Thin Straight Wire
Magnetic Field Due to Two Straight Wires
Theory of Metallic Conduction
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...