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Direct Imaging of Laser-driven Ultrafast Molecular Rotation
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GeSnOI mid-infrared laser technology.

Binbin Wang1, Emilie Sakat1, Etienne Herth1

  • 1Université Paris-Saclay, CNRS, C2N, 10 boulevard Thomas Gobert, 91120, Palaiseau, France.

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|November 17, 2021
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Summary
This summary is machine-generated.

Germanium-tin (GeSn) alloys are key for mid-infrared lasers. A new GeSn-on-insulator (GeSnOI) approach improves optical gain and light out-coupling for silicon photonics.

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Area of Science:

  • Semiconductor physics
  • Materials science
  • Optoelectronics

Background:

  • Germanium-tin (GeSn) alloys are promising for CMOS-compatible mid-infrared lasers.
  • Tensile strain and tin alloying enable direct bandgap properties in GeSn.
  • Existing GeSn laser technology faces challenges in optical confinement, strain, thermal, and defect management.

Purpose of the Study:

  • To demonstrate a GeSn-on-insulator (GeSnOI) stack for monolithic integration of Group-IV semiconductor lasers.
  • To address limitations in optical confinement and light management for near- and mid-infrared lasers.
  • To develop a versatile photonic platform for silicon-based photonics.

Main Methods:

  • Fabrication of microdisk-shape resonators on mesa structures from GeSnOI.
  • Utilizing stressor layers as dielectric optical claddings in the GeSnOI stack.
  • Bonding a GeSn alloy layer grown on a Ge strain-relaxed-buffer onto a Si(001) substrate.

Main Results:

  • GeSnOI microdisk mesas showed significantly improved optical gain compared to conventional suspended microdisk resonators.
  • Enhanced vertical out-coupling of in-plane radiation from disk whispering gallery modes was achieved.
  • Up to 30% vertical out-coupling efficiency was demonstrated.

Conclusions:

  • The GeSnOI approach is suitable for monolithic integration of planar Group-IV semiconductor lasers.
  • This technology offers a valuable asset for developing silicon-based mid-infrared photonics.
  • The method facilitates complex lightwave engineering on a versatile photonic platform.