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A New Approach to Designing High-Sensitivity Low-Dimensional Photodetectors.

Mohsen Rezaei¹, Simone Bianconi¹, Lincoln J Lauhon²

¹Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States.

|November 18, 2021

Summary

High internal gain in low-dimensional photodetectors can reduce sensitivity at low light. Junction capacitance, not gain, determines sensitivity, offering advantages for advanced photodetector design.

Keywords:

Capacitance Low-dimensional materials Photodetectors Quantum efficiency Responsivity Sensitivity

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Area of Science:

Optoelectronics
Materials Science
Semiconductor Devices

Background:

Low-dimensional materials (quantum dots, nanowires, 2D materials) offer high responsivity in photodetectors.
Maximizing internal gain in photodetectors can paradoxically decrease sensitivity at low light levels.

Purpose of the Study:

To demonstrate that junction capacitance, not internal gain, dictates sensitivity in low-dimensional photodetectors.
To provide a method for estimating capacitance and device sensitivity from photoresponse measurements.
To guide the design of highly sensitive photodetectors using low-dimensional materials.

Main Methods:

Analysis of photodetector performance, focusing on the role of junction capacitance.
Development and validation of a method to extract capacitance from external photoresponse measurements.
Benchmarking device sensitivity against fundamental physical limits.

Main Results:

Sensitivity in most low-dimensional photodetectors with internal gain is primarily limited by junction capacitance.
Extremely small capacitances in low-dimensional materials offer advantages over bulk semiconductors for high sensitivity.
A validated method allows for straightforward extraction of device sensitivity and capacitance.

Conclusions:

Low-dimensional materials enable photodetectors with superior sensitivity due to reduced capacitance and charge screening.
Understanding the capacitance-sensitivity relationship is crucial for optimizing low-dimensional photodetector design.
This work provides a pathway to achieve photodetector sensitivities surpassing current state-of-the-art.