A Flexible Design Platform for Si/SiGe Exchange-Only Qubits with Low Disorder

Area of Science:

• Quantum Information Science
• Semiconductor Quantum Devices
• Quantum Computing Hardware

Background:

• Spin-based silicon quantum dots offer promising qubit properties like long coherence times.
• Existing fabrication methods face challenges in scalability and design flexibility.

Purpose of the Study:

• To introduce a novel fabrication platform for silicon quantum dots.
• To demonstrate a versatile and scalable approach for creating qubit devices.

Main Methods:

• Developed the SLEDGE (Silicon LEad-edge Direct-write Gate dEvice) platform combining CMOS-like processing and direct-write lithography.
• Engineered dot-shaped gates patterned on a single plane, connected via vias to interconnects.
• Utilized rf qubit control and advanced lithographic techniques.

Main Results:

• Achieved reduced electrostatic disorder compared to traditional overlapping gate designs.
• Demonstrated spin coherent exchange oscillations in the fabricated qubits.
• Presented successful single-qubit blind randomized benchmarking data.

Conclusions:

• The SLEDGE platform offers a scalable and flexible approach for fabricating silicon quantum dot qubits.
• This technology shows potential for advancing quantum information processing with improved device performance and manufacturability.