Related Experiment Video
Updated: Oct 12, 2025
15:47
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
16.5K
Spin memory effect in charged single telecom quantum dots: erratum.
Optics Express
|November 23, 2021
Summary
This erratum corrects a minor detail in a previous optics publication. The reported wetting layer thickness value has been updated, but this change does not affect the study's findings or conclusions.
Area of Science:
- Optics and Photonics
- Materials Science
Background:
- Accurate material property reporting is crucial in scientific publications.
- Previous work in optics may contain minor typographical errors.
Purpose of the Study:
- To correct a specific numerical value in a previously published article.
- To ensure the accuracy of reported data in optical research.
Main Methods:
- Review of the original publication's data.
- Identification and correction of a typographical error in a reported parameter.
Main Results:
- The wetting layer thickness value in the original article has been corrected.
- The erratum clarifies a specific data point without altering the study's core outcomes.
Conclusions:
- The corrected value does not impact the overall results or conclusions of the original research.
- Maintaining data integrity through errata is essential for scientific reproducibility.
