Related Experiment Video
Updated: Oct 12, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Tunable phonon-plasmon hybridization in α-MoO3-graphene based van der Waals heterostructures
Abstract:
The plasmon-phonon hybridization behavior between anisotropic phonon polaritons (APhP) of orthorhombic phase Molybdenum Trioxide (α - MoO3) and the plasmon-polaritons of Graphene layer - forming a van der Waals (vdW) heterostructure is investigated theoretically in this paper. It is found that in-plane APhP shows strong interaction with graphene plasmons lying in their close vicinity, leading to large Rabi splitting. Anisotropic behavior of biaxial MoO3 shows the polarization-dependent response with strong anti-crossing behavior at 0.55 eV and 0.3 eV of graphene's Fermi potential for [100] and [001] crystalline directions, respectively. Numerical results reveal unusual electric field confinement for the two arms of enhanced hybrid modes: the first being confined in the graphene layer representing plasmonic-like behavior. The second shows volume confined zigzag pattern in hyperbolic MoO3. It is also found that the various plasmon-phonon hybridized modes could be wavelength tuned, simply by varying the Fermi potential of the graphene layer. The coupling response of the hybrid structure is studied analytically using the coupled oscillator model. Furthermore, we also infer upon the coupling strength and frequency splitting between the two layers with respect to their structural parameters and interlayer spacing. Our work will provide an insight into the active tunable property of hybrid van der Waals (vdW) structure for their potential application in sensors, detectors, directional spontaneous emission, as well as for the tunable control of the propagating polaritons in fields of flat dispersion where strong localization of photons can be achieved, popularly known as the flatband optics.
Related Concept Videos
Spin–Spin Coupling Constant: Overview
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must...
IR Absorption Frequency: Hybridization
Among the sp, sp2, and sp3 hybridized orbitals, sp orbitals have the maximum s character (50%). Consequently, the electrons are held more closely to the nucleus, resulting in stronger and shorter C–H bonds that...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
π Electron Effects on Chemical Shift: Overview
Hybridization of Atomic Orbitals I
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

