Related Experiment Video
Updated: Oct 12, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Ferroelectric Negative-Capacitance-Assisted Phase-Transition Field-Effect Transistor
Abstract:
An enormous study is being carried out in the field of emerging steep slope devices, specifically on negative-capacitance-based and phase transition-based devices. This article investigates the action of ferroelectric (FE) and phase transition material (PTM) on a hybrid device, negative-capacitance-assisted phase transition FinFET (NC-PT-FinFET). We encounter several unique phenomena resulting from this unified action and provide valid arguments based on these observations. A significant enhancement in the differential gain and transconductance, a unique variation in the effect of PTM on drain-channel coupling, tunability of hysteresis across PTM by FE thickness( [Formula: see text]), and ultralow subthreshold slope (SS) by lowering both of its factors are some of the major outcomes of the NC-PT-FinFET. Focus is built on comprehending the individual role of FE and PTM in the intriguing features observed in every device performance parameter with the help of mathematical expressions and physical interpretations. Various tunable parameters present in this hybrid device widen its applicability in digital and memory applications.
More Related Videos
10:40A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
08:43Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Related Concept Videos
Field Effect Transistor
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...