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Published on: November 5, 2014
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GaAs diodes for TiT2-based betavoltaic cells
M V Dorokhin1, O V Vikhrova1, P B Demina1
1Research Institute for Physics and Technology, Lobachevsky State University of Nizhni Novgorod, 603950, Nizhni Novgorod, Russia.
Summary
Investigating gallium arsenide (GaAs) semiconductor structures for betavoltaic power sources revealed that carbon deposition improves performance. This passivation of surface states enhances betavoltaic device efficiency.
Area of Science:
- Materials Science
- Semiconductor Physics
- Nuclear Engineering
Background:
- Betavoltaic power sources offer long-term, reliable energy generation.
- Gallium arsenide (GaAs) is a promising semiconductor material for these applications.
- Understanding surface effects is crucial for optimizing device performance.
Purpose of the Study:
- To investigate and compare the betavoltaic performance of different GaAs semiconductor structures.
- To evaluate the impact of carbon layer deposition on GaAs betavoltaic devices.
- To identify methods for enhancing the efficiency of GaAs-based betavoltaic power sources.
Main Methods:
- Comparative study of Schottky diode, p-n junction, and carbon-modified Schottky structures.
- Monte Carlo simulations to estimate power characteristics.
- Electron beam induced current (EBIC) technique to obtain device parameters.
Main Results:
- Carbon deposition on n-GaAs surfaces passivates surface states.
- This passivation leads to improved betavoltaic performance.
- The modified Schottky structure demonstrated enhanced power characteristics compared to standard structures.
Conclusions:
- Surface state passivation is critical for efficient GaAs betavoltaic devices.
- Carbon layer deposition is an effective method for surface passivation.
- Optimized GaAs structures show potential for advanced betavoltaic power sources.
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