Related Experiment Video
Updated: Oct 12, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Toward Learning in Neuromorphic Circuits Based on Quantum Phase Slip Junctions
Ran Cheng1,2, Uday S Goteti3, Harrison Walker2,4
1Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, United States.
Abstract:
We explore the use of superconducting quantum phase slip junctions (QPSJs), an electromagnetic dual to Josephson Junctions (JJs), in neuromorphic circuits. These small circuits could serve as the building blocks of neuromorphic circuits for machine learning applications because they exhibit desirable properties such as inherent ultra-low energy per operation, high speed, dense integration, negligible loss, and natural spiking responses. In addition, they have a relatively straight-forward micro/nano fabrication, which shows promise for implementation of an enormous number of lossless interconnections that are required to realize complex neuromorphic systems. We simulate QPSJ-only, as well as hybrid QPSJ + JJ circuits for application in neuromorphic circuits including artificial synapses and neurons, as well as fan-in and fan-out circuits. We also design and simulate learning circuits, where a simplified spike timing dependent plasticity rule is realized to provide potential learning mechanisms. We also take an alternative approach, which shows potential to overcome some of the expected challenges of QPSJ-based neuromorphic circuits, via QPSJ-based charge islands coupled together to generate non-linear charge dynamics that result in a large number of programmable weights or non-volatile memory states. Notably, we show that these weights are a function of the timing and frequency of the input spiking signals and can be programmed using a small number of DC voltage bias signals, therefore exhibiting spike-timing and rate dependent plasticity, which are mechanisms to realize learning in neuromorphic circuits.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
The Role of Ion Channels in Neuronal Computation
Sometimes a single EPSP is strong enough to induce an action potential in the postsynaptic neuron. However, multiple presynaptic inputs must often create EPSPs around the same time for the postsynaptic neuron to be sufficiently depolarized to fire an action potential....
Neural Circuits
Neuronal pools are collections of nerve cells with similar functions and interact through chemical and electrical signals. These pools include both interneurons (the central neural circuit nodes that...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Electrical Synapses
Gap junctions allow the current to pass directly from one cell to the next. In contrast, in the chemical synapse, the neurotransmitters carry the information through the synaptic cleft from one neuron to the next. They consist of two...

