Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Capacitor With A Dielectric01:18

Capacitor With A Dielectric

4.3K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
4.3K
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

5.2K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
5.2K
Non-ohmic Devices00:51

Non-ohmic Devices

1.2K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.2K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.4K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.4K
Diode: Reverse bias01:14

Diode: Reverse bias

1.1K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
1.1K
Schottky Barrier Diode01:27

Schottky Barrier Diode

544
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
544

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Hydrodynamic Size Modulation of Exopolysaccharides from <i>Leuconostoc mesenteroides</i> WiKim33 via Genetic Modification and Its Impact on the Properties in Film.

Journal of microbiology and biotechnology·2025
Same author

Plant immunity to insect herbivores: mechanisms, interactions, and innovations for sustainable pest management.

Frontiers in plant science·2025
Same author

The role of <i>Bacillus</i> species in the management of plant-parasitic nematodes.

Frontiers in microbiology·2025
Same author

Epidemiological Characteristics of a COVID-19 Outbreak in a Psychiatric Hospital in Chung-buk.

Healthcare (Basel, Switzerland)·2023
Same author

Effect of Chitosan Coating for Efficient Encapsulation and Improved Stability under Loading Preparation and Storage Conditions of <i>Bacillus</i> Lipopeptides.

Nanomaterials (Basel, Switzerland)·2022
Same author

Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs.

Micromachines·2022

Related Experiment Video

Updated: Oct 12, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K

Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory.

Woo-Jin Jung1, Jun-Young Park1

  • 1School of Electronics Engineering, Chungbuk National University, Chungdae-ro 1, Chungbuk, Cheongju 28644, Korea.

Micromachines
|November 27, 2021
PubMed
Summary
This summary is machine-generated.

Controlling cell-to-cell interference in 3D NAND flash memory is challenging due to increased word-lines (WLs). This study explores dielectric engineering and proposes a new cell structure to mitigate voltage interference in 3D NAND devices.

Keywords:
V-NANDcell-programmingdielectricsflash memoryinterferencevacuum dielectric

More Related Videos

Microfluidic Buffer Exchange for Interference-free Micro/Nanoparticle Cell Engineering
10:27

Microfluidic Buffer Exchange for Interference-free Micro/Nanoparticle Cell Engineering

Published on: July 10, 2016

9.2K
Electric-Field-Induced Neural Precursor Cell Differentiation in Microfluidic Devices
07:15

Electric-Field-Induced Neural Precursor Cell Differentiation in Microfluidic Devices

Published on: April 14, 2021

3.9K

Related Experiment Videos

Last Updated: Oct 12, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
Microfluidic Buffer Exchange for Interference-free Micro/Nanoparticle Cell Engineering
10:27

Microfluidic Buffer Exchange for Interference-free Micro/Nanoparticle Cell Engineering

Published on: July 10, 2016

9.2K
Electric-Field-Induced Neural Precursor Cell Differentiation in Microfluidic Devices
07:15

Electric-Field-Induced Neural Precursor Cell Differentiation in Microfluidic Devices

Published on: April 14, 2021

3.9K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • 3D NAND flash memory offers higher storage density than 2D NAND.
  • Increased word-line (WL) count in 3D NAND exacerbates cell-to-cell interference due to parasitic capacitance.
  • Existing methods struggle to control this interference within limited vertical space.

Purpose of the Study:

  • To investigate voltage interference characteristics in 3D NAND flash memory concerning dielectric materials.
  • To propose an innovative cell structure for suppressing cell-to-cell interference.
  • To enhance the reliability and performance of 3D NAND devices.

Main Methods:

  • Analysis of parasitic capacitance effects between WLs in 3D NAND structures.
  • Simulation and characterization of dielectric properties influencing voltage interference.
  • Design and conceptualization of an alternative 3D NAND cell architecture.

Main Results:

  • Identified key dielectric properties that significantly impact WL-to-WL interference.
  • Demonstrated the potential of dielectric engineering to reduce parasitic capacitance.
  • Proposed a novel cell structure exhibiting suppressed voltage interference.

Conclusions:

  • Dielectric engineering is a viable strategy for managing interference in 3D NAND.
  • The proposed cell structure effectively mitigates voltage interference, improving device performance.
  • Further research into advanced dielectric materials and cell designs is warranted for next-generation 3D NAND.