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Updated: Oct 12, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications

Jae-Young Sung1, Jun-Kyo Jeong1, Woon-San Ko1

  • 1Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea.

Micromachines
|November 27, 2021
PubMed

Keywords:
deuterium high pressure annealflash memoryretentionsilicon nitride

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