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Related Concept Videos

P-N junction01:11

P-N junction

746
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
746
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.0K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.0K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

520
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
520
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

363
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
363
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

560
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
560
Schottky Barrier Diode01:27

Schottky Barrier Diode

544
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Preparation of ZnO Nanorod/Graphene/ZnO Nanorod Epitaxial Double Heterostructure for Piezoelectrical Nanogenerator by Using Preheating Hydrothermal
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Pure Graphene Oxide Vertical p-n Junction with Remarkable Rectification Effect.

Yan Fan1, Tao Wang1, Yinwei Qiu1

  • 1Department of Optical Engineering, School of Information and Industry, Zhejiang A&F University, Hangzhou 311300, China.

Molecules (Basel, Switzerland)
|November 27, 2021
PubMed
Summary

Researchers developed a new vertical p-n junction using only graphene oxide (GO), controlling oxygen content for undoped devices. This method offers a simple, scalable approach for electronics and sensors.

Keywords:
graphene oxideundoped p–n junctionvertical p–n junction

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Graphene p-n junctions are crucial for optical interconnections and low-power integrated circuits.
  • Current methods often rely on chemical doping to create lateral p-n junctions.

Purpose of the Study:

  • To develop a novel, undoped vertical p-n junction using only graphene oxide (GO).
  • To investigate the rectification properties and stability of these GO-based p-n junctions.
  • To explore their potential applications in electronics and sensors.

Main Methods:

  • Fabrication of vertical p-n junctions by controlling the oxygen content of graphene oxide (GO).
  • Characterization of the current-voltage (I-V) behavior to assess rectification.
  • Long-term stability testing under sealed conditions.
  • Evaluation of photoelectric response and influence of environmental factors (thickness, oxygen content, humidity, temperature).
  • Hall effect measurements to determine semiconductor type (n-type for reduced graphene oxide - rGO).

Main Results:

  • Demonstrated a remarkable rectification effect in the pure graphene oxide (pGO) vertical p-n junction.
  • Confirmed stability of rectification characteristics over six months of storage.
  • Observed significant photoelectric response and tunable rectification based on GO properties and environmental conditions.
  • Identified rGO as n-type and GO as p-type semiconductor, enabling p-n junction formation.

Conclusions:

  • A simple, convenient, and scalable method for preparing undoped GO vertical p-n junctions was established.
  • These junctions exhibit excellent rectification, stability, and photoelectric properties.
  • The developed GO vertical p-n junctions show great potential for applications in advanced electronics and highly sensitive sensors.