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Thermo-Magneto-Electric Transport through a Torsion Dislocation in a Type I Weyl Semimetal
Daniel Bonilla1, Enrique Muñoz1,2, Rodrigo Soto-Garrido1
1Physics Institute, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, Santiago 8970117, Chile.
Abstract:
Herein, we study electronic and thermoelectric transport in a type I Weyl semimetal nanojunction, with a torsional dislocation defect, in the presence of an external magnetic field parallel to the dislocation axis. The defect is modeled in a cylindrical geometry, as a combination of a gauge field accounting for torsional strain and a delta-potential barrier for the lattice mismatch effect. In the Landauer formalism, we find that due to the combination of strain and magnetic field, the electric current exhibits chiral valley-polarization, and the conductance displays the signature of Landau levels. We also compute the thermal transport coefficients, where a high thermopower and a large figure of merit are predicted for the junction.
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