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Related Experiment Video

Updated: Oct 11, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

Tunable Infrared Optical Switch Based on Vanadium Dioxide.

Qi Wang¹, Shijie Zhang¹, Chen Wang¹

¹Shanghai Key Laboratory of Modern Optics System, Engineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Laboratory of Modern Optical System, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, 516 Jungong Rd., Shanghai 200093, China.

Nanomaterials (Basel, Switzerland)

|November 27, 2021

Summary

This summary is machine-generated.

This study introduces a tunable infrared optical switch using aluminum nanoarrays and vanadium dioxide. The device enables wavelength-selective switching and ultrafast ON/OFF modes for advanced optical applications.

Keywords:

localized surface plasmon resonance mid-infrared optical switch vanadium dioxide

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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

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Area of Science:

Plasmonics
Metamaterials
Infrared Optics

Background:

Plasmonic nanostructures offer unique light-matter interactions.
Vanadium dioxide (VO2) exhibits a phase transition crucial for tunable optical devices.
Mid-infrared (MIR) optical switching is essential for various applications.

Purpose of the Study:

To propose and simulate a tunable infrared optical switch.
To achieve arbitrary wavelength-selective optical switching in the MIR region.
To demonstrate ultrafast ON/OFF switching capabilities.

Main Methods:

Design of a plasmonic structure with aluminum nanoarrays and a VO2 thin film.
Utilizing finite-difference time-domain (FDTD) software for performance simulation.
Investigating the effect of nanoarray radii on wavelength selectivity.

Main Results:

Demonstrated arbitrary wavelength-selective optical switching by tuning nanoarray radii.
Achieved two-way switching (ON/OFF modes) due to VO2 phase transition.
Obtained high modulation depth (up to 99.4%) and extinction ratio (exceeding -22.16 dB).

Conclusions:

The proposed plasmonic optical switch offers excellent performance for MIR applications.
The VO2 thin film enables ultrafast switching with femtosecond-scale phase transition times.
This tunable optical switch provides a promising platform for advanced photonic integrated circuits.