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ZrSnO4: A Solution-Processed Robust Electron Transport Layer of Efficient Planar-Heterojunction Perovskite Solar
Jun Choi1, Young Ki Park2, Hee Dong Lee2
1Material & Component Convergence R&D Department, Korea Institute of Industrial Technology (KITECH), Ansan-si 15588, Gyeonggi-do, Korea.
Abstract:
A robust electron transport layer (ETL) is an essential component in planar-heterojunction perovskite solar cells (PSCs). Herein, a sol-gel-driven ZrSnO4 thin film is synthesized and its optoelectronic properties are systematically investigated. The optimized processing conditions for sol-gel synthesis produce a ZrSnO4 thin film that exhibits high optical transmittance in the UV-Vis-NIR range, a suitable conduction band maximum, and good electrical conductivity, revealing its potential for application in the ETL of planar-heterojunction PSCs. Consequently, the ZrSnO4 ETL-based devices deliver promising power conversion efficiency (PCE) up to 19.05% from CH3NH3PbI3-based planar-heterojunction devices. Furthermore, the optimal ZrSnO4 ETL also contributes to decent long-term stability of the non-encapsulated device for 360 h in an ambient atmosphere (T~25 °C, RH~55%,), suggesting great potential of the sol-gel-driven ZrSnO4 thin film for a robust solution-processed ETL material in high-performance PSCs.
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