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Published on: March 24, 2019
Coexisting ferromagnetic-antiferromagnetic state in twisted bilayer CrI3
Yang Xu1,2, Ariana Ray3, Yu-Tsun Shao1
1School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
Engineers created new magnetic states in twisted chromium triiodide (CrI3) bilayers by combining ferromagnetic and antiferromagnetic properties. This breakthrough enables control over magnetic states for potential use in advanced memory devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Moiré engineering of van der Waals magnetic materials offers pathways to novel magnetic ground states.
- Theoretical predictions include multiflavour, non-collinear magnetic states, and moiré magnon bands in twisted magnetic heterostructures.
- Experimental realization of these complex magnetic states has remained elusive.
Purpose of the Study:
- To experimentally demonstrate complex magnetic ground states in twisted bilayer magnetic materials.
- To investigate the role of stacking-dependent interlayer exchange interactions.
- To explore electrical control over emergent magnetic phases.
Main Methods:
- Fabrication of small-twist-angle chromium triiodide (CrI3) bilayers.
- Utilizing stacking-dependent interlayer exchange interactions.
- Investigating doping dependence and electrical gating effects.
Main Results:
- Demonstrated a coexisting ferromagnetic (FM) and antiferromagnetic (AF) ground state in twisted CrI3 bilayers.
- Observed a transition to a collinear FM state above a critical twist angle of ~3°.
- Confirmed that coexisting FM and AF domains arise from competing interlayer couplings and domain wall energy costs.
- Showcased electrical control over the FM-AF state via doping and gating.
Conclusions:
- The study experimentally confirms the emergence of non-collinear magnetic ground states with FM and AF domains on the moiré superlattice length scale.
- This work highlights the potential for creating complex magnetic states in twisted magnetic heterostructures.
- The findings suggest applications in gate-voltage-controllable high-density magnetic memory storage.
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