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Teng Li1, Hongliang Yu, Ziyu Xiong
1Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China. sutinghan@szu.edu.cn.
This study introduces 2D covalent organic framework (COF) resistive random access memory (RRAM) devices that overcome variability issues. These electroforming-free COF RRAMs enable stable, high-performance data storage and neuromorphic computing applications.
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