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Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Intercorrelated ferroelectrics in 2D van der Waals materials
Yan Liang1, Shiying Shen, Baibiao Huang
1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, People's Republic of China. daiy60@sina.com yandong.ma@sdu.edu.cn.
Abstract:
2D intercorrelated ferroelectrics, exhibiting a coupled in-plane and out-of-plane ferroelectricity, is a fundamental phenomenon in the field of condensed-mater physics. The current research is based on the paradigm of bi-directional inversion asymmetry in single-layers, which restricts 2D intercorrelated ferroelectrics to extremely few systems. Herein, we propose a new scheme for achieving 2D intercorrelated ferroelectrics using van der Waals (vdW) interaction, and apply this scheme to a vast family of 2D vdW materials. Using first-principles, we demonstrate that 2D vdW multilayers, for example, BN, MoS2, InSe, CdS, PtSe2, TI2O, SnS2, Ti2CO2etc., can exhibit coupled in-plane and out-of-plane ferroelectricity, thus yielding 2D intercorrelated ferroelectric physics. We further predict that such intercorrelated ferroelectrics could demonstrate many distinct properties, for example, electrical full control of spin textures in trilayer PtSe2 and electrical permanent control of valley-contrasting physics in four-layer VS2. Our finding opens a new direction for 2D intercorrelated ferroelectric research.
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