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Novel two-dimensional beta-XTe (X = Ge, Sn, Pb) as promising room-temperature thermoelectrics
Yuxiang Ni1, Dingbo Zhang1, Xin Liu1
1School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China.
Abstract:
In this paper, we designed novel low-symmetry two-dimensional (2D) structures based on conventional XTe (X = Ge, Sn, Pb) thermoelectrics with large average atomic mass. The first-principles calculations combined with Boltzmann transport theory show that the beta-XTe exhibit good stability, high electron carrier mobility, and ultralow ΚL. The subsequent analyses show that the ultralow ΚL stems from the coexistence of resonant bonding, weak bonding, and lone-pair electrons in beta-XTe, which leads to large anharmonicities. On the other hand, the lowest energy conduction band of beta-GeTe and beta-SnTe show the convergence of the low-lying Ʃ band, which is the source of the high-power factor in the two systems. The calculated maximum ZT of beta-XTe (X = Ge, Sn, Pb) are 3.08, 1.60, and 0.57 at 300 K, respectively, which is significantly greater than that of the previously reported high-symmetry 2D alpha-XTe and the commercial thermoelectrics. We hope that this work can provide important guidance for the development of thermoelectric materials.
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