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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

544
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
544

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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
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Protein biosensor based on Schottky barrier nanowire field effect transistor.

Tatyana E Smolyarova1, Lev V Shanidze2, Anna V Lukyanenko3

  • 1Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russia; Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russia; Siberian Federal University, Krasnoyarsk, 660041, Russia.

Talanta
|December 2, 2021
PubMed
Summary

We developed silicon nanowire transistors for biomolecular detection. Experimental and simulation results align, paving the way for advanced nanowire biosensors.

Keywords:
Back gate nanowire FETSchottky contacts FETSi nanowire biosensorSilicon-on-insulator

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Area of Science:

  • Nanotechnology
  • Materials Science
  • Electrical Engineering
  • Biophysics

Background:

  • Silicon nanowires are promising for electronic devices.
  • Field-effect transistors (FETs) are sensitive to their environment.
  • Biomolecular detection requires highly sensitive and specific sensors.

Purpose of the Study:

  • To fabricate silicon-on-insulator (SOI) based silicon nanowire field-effect transistors (FETs) using Schottky contacts.
  • To investigate the application of these devices in label-free biomolecular detection.
  • To understand the charge carrier transport mechanisms within the nanowire.

Main Methods:

  • Top-down nanofabrication: molecular beam epitaxy and electron beam lithography.
  • Device fabrication on silicon-on-insulator (SOI) wafers with Schottky contacts.
  • Biomolecular detection via monitoring drain-source current (IDS) changes.
  • Physical mechanism analysis using energy band diagrams and TCAD 2D simulations.

Main Results:

  • Successfully fabricated silicon nanowire back gate FETs on SOI.
  • Demonstrated the device's capability for biomolecular detection.
  • Achieved good agreement between experimental data and TCAD numerical simulations.
  • Elucidated charge carrier transport mechanisms in the nanowire.

Conclusions:

  • The fabricated silicon nanowire FETs are suitable for biomolecular sensing applications.
  • The study provides a validated model for understanding device operation.
  • This work contributes to the development of novel nanowire-based biosensors.