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Published on: March 24, 2019
PT-Symmetry-Enabled Spin Circular Photogalvanic Effect in Antiferromagnetic Insulators
Ruixiang Fei1, Wenshen Song1, Lauren Pusey-Nazzaro1
1Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130, USA.
We discovered a new way to generate highly spin-polarized currents at room temperature in antiferromagnetic insulators using the spin circular photogalvanic effect (spin CPGE). This breakthrough could enable ultrafast spintronics applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Ultrafast spintronics relies on short timescale spin dynamics in antiferromagnets.
- Generating highly spin-polarized currents at room temperature in antiferromagnets is a significant challenge.
Purpose of the Study:
- To propose and demonstrate a novel mechanism for generating highly spin-polarized currents at room temperature in antiferromagnetic insulators.
- To explore the spin circular photogalvanic effect (spin CPGE) for ultrafast spintronics.
Main Methods:
- First-principles simulations were employed to demonstrate the spin CPGE.
- The study focused on bilayer CrI3 and room-temperature antiferromagnetic hematite.
Main Results:
- The spin CPGE was shown to produce highly spin-polarized currents at room temperature in parity-time (PT)-symmetric antiferromagnetic insulators.
- The magnitude of the spin photocurrent was found to be comparable to charge photocurrents in ferroelectric materials.
- The generated spin photocurrent is insensitive to spin-orbit interactions.
Conclusions:
- The spin CPGE offers a promising route for realizing fast-dynamic and temperature-robust pure spin currents.
- This effect is applicable to a wide range of PT-symmetric antiferromagnetic materials, including topological axion insulators.
- The findings challenge the conventional understanding of spin current generation mechanisms.
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