Low-Dimensional In₂Se₃ Compounds: From Material Preparations to Device Applications.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Nanostructured Indium Selenide (In2Se3) compounds are crucial for electronics, optoelectronics, and thermoelectrics.
• Recent discovery of ferroelectricity in low-dimensional (low-D) In2Se3 has renewed interest in its applications.
• Properties like ferroelectricity, thermoelectricity, and optoelectronics are intrinsically linked to In2Se3's crystal structure.

Purpose of the Study:

• To review the crystal and electronic band structures of In2Se3 compounds.
• To summarize recent progress in preparing low-dimensional In2Se3 with controlled phases.
• To discuss the applications of In2Se3 nanostructures in various advanced devices.

Main Methods:

• Literature review of crystal structures and electronic band structures.
• Analysis of preparation techniques for low-dimensional In2Se3.
• Summary of demonstrated properties and device applications.

Main Results:

• Detailed summary of crystal and electronic band structures for In2Se3 family.
• Discussion on methods for obtaining pure-phased In2Se3 nanostructures.
• Overview of excellent ferroelectric, optoelectronic, and thermoelectric properties in nanostructured and heterostructured In2Se3.

Conclusions:

• In2Se3 nanostructures exhibit significant potential in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics.
• Further research is needed to address challenges and explore opportunities in In2Se3 material preparation and applications.
• Controlled phase preparation is key to optimizing the performance of In2Se3-based functional devices.