Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

518
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
518
MOSFET01:16

MOSFET

659
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
659
MOS Capacitor01:25

MOS Capacitor

1.1K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.1K
Characteristics of MOSFET01:17

Characteristics of MOSFET

551
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
551
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

507
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
507
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

558
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
558

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Low Temperature Growth of High-Quality Wurtzite Ferroelectric Through Quasi-van der Waals Epitaxy.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Cross-species transcriptomic evidence for peripheral-central immune crosstalk in atopic dermatitis.

Frontiers in immunology·2026
Same author

All-two-dimensional, ion-gating synaptic transistors for high-temperature and ultralow-energy-consumption neuromorphic applications.

Science advances·2026
Same author

Polar nano-regions enable large spin Hall conductivity in metallic PtCoO<sub>2</sub>.

Nature materials·2026
Same author

Regulating Dehydrogenation Kinetics of MgH<sub>2</sub> via Late-Transition-Metal-Substituted Nb<sub>2</sub>AC MAX Phases (A = Fe, Ni, Cu).

Inorganic chemistry·2026
Same author

Multidimensional psychological and neurophysiological effects of moderate- and low-intensity exercise on pregnant women: an integrative systematic review and Bayesian framework network meta-analysis.

Archives of women's mental health·2026

Related Experiment Video

Updated: Oct 11, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.0K

Monolayer MoS2 Synaptic Transistors for High-Temperature Neuromorphic Applications.

Bolun Wang1, Xuewen Wang1, Enze Wang1

  • 1State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.

Nano Letters
|December 6, 2021
PubMed
Summary

Researchers developed high-temperature synaptic transistors using MoS2 and Na+-diffused SiO2, achieving a 10^6 on/off ratio at 350°C for advanced artificial neural network applications.

Keywords:
high temperatureionic gatemolybdenum disulfideneuromorphic applicationsynaptic transistor

More Related Videos

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.5K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.9K

Related Experiment Videos

Last Updated: Oct 11, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.0K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.5K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.9K

Area of Science:

  • Materials Science
  • Neuroscience
  • Electrical Engineering

Background:

  • Artificial synapses are crucial for artificial neural networks (ANNs).
  • High-temperature operation (>125 °C) is desirable but challenging due to material limitations.
  • Existing synaptic transistors fail at elevated temperatures.

Purpose of the Study:

  • To develop a synaptic transistor capable of operating at hundreds of degrees Celsius.
  • To demonstrate high-temperature synaptic plasticity and ANN simulation.

Main Methods:

  • Utilized monolayer MoS2 as the channel material.
  • Employed Na+-diffused SiO2 as the ionic gate medium.
  • Tested device performance at temperatures up to 350 °C.

Main Results:

  • Achieved a large on/off ratio of 10^6 at 350 °C.
  • Demonstrated short-term plasticity functioning as a low-pass dynamic filter.
  • Showcased long-term potentiation/depression and spike-timing-dependent plasticity at 150 °C.
  • Successfully simulated an ANN with 90% recognition accuracy.

Conclusions:

  • The developed synaptic transistor operates reliably at high temperatures.
  • This technology offers promising strategies for high-temperature neuromorphic computing applications.
  • The device exhibits essential synaptic functions crucial for ANNs.