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Keep it simple and switch to pure tellurium.

Raffaella Calarco¹, Fabrizio Arciprete²

¹Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), Via del Fosso del Cavaliere 100, 00133 Roma, Italy.

Science (New York, N.Y.)

|December 9, 2021

Summary

Tellurium switches utilize crystalline-liquid-crystalline phase transitions to operate memory devices. This novel approach offers a new pathway for advanced memory technologies.

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Area of Science:

Materials Science
Solid-State Physics
Nanotechnology

Background:

Phase-change materials are crucial for non-volatile memory technologies.
Controlling phase transitions is key to memory operation.

Purpose of the Study:

To investigate the use of tellurium in phase-change memory.
To demonstrate memory operation via crystalline-liquid-crystalline transitions.

Main Methods:

Fabrication of tellurium-based memory devices.
Characterization of phase transitions using electrical and optical methods.

Main Results:

Tellurium successfully demonstrated reversible crystalline-liquid-crystalline phase changes.
These phase changes were correlated with distinct electrical resistance states, enabling memory function.

Conclusions:

Tellurium is a viable material for phase-change memory applications.
The crystalline-liquid-crystalline transition mechanism offers a promising route for future memory devices.