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Related Concept Videos

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P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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The role of the detectors in High-Performance Liquid Chromatography (HPLC) is to analyze the solutes as they exit from the chromatographic column. The detector recognizes the solute's property and generates corresponding electrical signals, which are converted into a readable graph of the detector's response versus elution time called a chromatogram at the computer. There are several types of HPLC detectors, each with its own advantages and limitations, depending on the analyte...
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High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with

Ozhan Koybasi1, Ørnulf Nordseth2, Trinh Tran3

  • 1Department of Microsystems and Nanotechnology (MiNaLab), SINTEF Digital, 0314 Oslo, Norway.

Sensors (Basel, Switzerland)
|December 10, 2021
PubMed
Summary

Researchers developed new silicon photodetectors with record high quantum efficiency using optimized SiO2/SiNx passivation. These advancements minimize recombination and optical losses, leading to highly efficient induced-junction photodiodes with minimal quantum deficiencies.

Keywords:
PECVD silicon nitrideinduced-junctioninversion layer photodiodeoptical powerpredictable quantum efficiencyprimary standardradiometrysilicon photodetectorsurface passivation

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Area of Science:

  • Materials Science and Engineering
  • Semiconductor Device Physics
  • Optoelectronics

Background:

  • Silicon photodetectors are crucial for various optical sensing applications.
  • Achieving high quantum efficiency requires minimizing surface recombination and optical losses.
  • Dielectric passivation layers like SiO2 and SiNx are essential for silicon device performance.

Purpose of the Study:

  • To develop induced-junction silicon photodetectors with record high quantum efficiency.
  • To optimize plasma-enhanced chemical vapor deposited (PECVD) SiNx passivation for silicon-dielectric interfaces.
  • To minimize recombination and optical losses in silicon photodetectors.

Main Methods:

  • Systematic study combining simulation and experimental techniques.
  • Optimization of PECVD SiNx deposition parameters.
  • Measurements of minority carrier lifetime, fixed charge density, and optical properties.
  • 2D and 3D simulations to determine surface recombination velocity and quantum deficiency.
  • Fabrication and testing of induced-junction photodiodes using SiO2 and SiNx passivation.

Main Results:

  • Optimized PECVD SiNx passivation significantly reduced recombination losses.
  • Fabricated photodiodes with SiO2/SiNx stack passivation achieved record high quantum efficiency.
  • Predictable Quantum Efficient Detectors (PQEDs) based on these photodiodes showed negligible quantum deficiencies (down to 1 ppm).

Conclusions:

  • The developed SiO2/SiNx passivation strategy is highly effective for high-performance silicon photodetectors.
  • The optimized photodetectors demonstrate potential for ultra-precise optical measurements.
  • This work advances the state-of-the-art in silicon photodetector technology.