Related Experiment Video
Updated: Oct 10, 2025

Indirect Fabrication of Lattice Metals with Thin Sections Using Centrifugal Casting
Published on: May 14, 2016
Robust Heterojunctions of Metallic Alloy and Carbon Fiber-Reinforced Composite Induced by Laser Processing
Haipeng Wang1, Peng Yan1, Yingchun Guan2,3
1Key Laboratory of High-Efficiency and Clean Mechanical Manufacture of MOE, School of Mechanical Engineering, Shandong University, Jinan 250061, China.
Abstract:
The development of heterojunctions with a strong bonding interface between metals and non-metals has attracted much attention owing to their great potential for use in lightweight structures. Laser joining technology, which emerged as a fast and reliable method, has proven its feasibility and unique advantages in joining metal to polymer matrix composites. Herein, an optimized laser joining configuration has been employed to realize high-quality joining of titanium alloy and carbon fiber-reinforced composite. Cross-sectional microstructures of laser-produced joints reveal that micro-bubbles near the interface have been effectively suppressed and eliminated due to the continual clamping pressure applied to the joined area during the joining process. Tensile tests suggest that the joint strength increases with structure density on a titanium alloy surface, and the greatest fracture strength of joints reaches more than 60 MPa even after experiencing a high-low temperature alternating aging test. For higher structure density (>95%), the joints fail by the fracture of parent plastics near the joined area due to the tensile-loading-induced peel stress at the edges of the overlap region. Otherwise, the joints fail by interfacial shear fracture with breakage when the structure density is lower than 91.5%. The obtained high-performance heterojunctions show great potential in the aerospace and automotive fields.
Related Concept Videos
Fiber Reinforced Concrete
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

