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Related Experiment Video

Updated: Oct 10, 2025

Synthesis, Characterization, and Functionalization of Hybrid Au/CdS and Au/ZnS Core/Shell Nanoparticles

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Published on: March 2, 2016

Tuning Hot Carrier Dynamics of InP/ZnSe/ZnS Quantum Dots by Shell Morphology Control.

Jumi Park¹, Yu-Ho Won², Yongseok Han²

¹Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.

Small (Weinheim an Der Bergstrasse, Germany)

|December 10, 2021

Summary

Isotropic InP/ZnSe/ZnS quantum dots (QDs) with improved photoluminescence (PL) quantum yield were synthesized. Suppressing stacking faults in these QDs enhances luminescence and reduces defects for display applications.

Keywords:

InP/ZnSe/ZnS charge carrier dynamics crystalline structure quantum dots shell morphology structural defects

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Last Updated: Oct 10, 2025

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Area of Science:

Materials Science
Nanotechnology
Quantum Dot Research

Background:

Quantum dots (QDs) are semiconductor nanocrystals with tunable optical and electronic properties.
Indium phosphide (InP)-based QDs are explored as alternatives to cadmium-based QDs due to toxicity concerns.
Controlling QD morphology is crucial for optimizing their photophysical properties.

Purpose of the Study:

To investigate the effect of quantum dot (QD) morphology on photophysical properties, specifically photoluminescence (PL) and charge carrier dynamics.
To understand the role of stacking faults in anisotropic QDs on luminescence efficiency.
To present a method for designing highly luminescent QDs for display applications.

Main Methods:

Synthesis of isotropic InP/ZnSe/ZnS quantum dots (QDs) at high reaction temperatures.
Analysis of QD morphology and its correlation with photophysical properties.
Investigation of photoluminescence (PL) blinking and ultrafast charge carrier dynamics.

Main Results:

High reaction temperature facilitated isotropic ZnSe shell growth on InP cores.
Fast crystal growth eliminated stacking faults, improving PL quantum yield by nearly 20%.
Isotropic QDs showed suppressed hot hole trapping compared to anisotropic QDs, indicating stacking faults act as luminescence defects.

Conclusions:

QD shape significantly impacts photophysical properties, including charge carrier dynamics.
Eliminating stacking faults through isotropic growth is key to enhancing QD luminescence.
The findings offer insights into designing high-performance InP QDs for advanced display technologies.