Related Experiment Video
Updated: Oct 10, 2025

In Situ Neutron Powder Diffraction Using Custom-made Lithium-ion Batteries
Published on: November 10, 2014
Self-Optimizing Effect in Lithium Storage of GeO2 Induced by Heterointerface Regulation
Junxiu Wu1, Anwen Tang2, Kaihong Wang1
1Fujian Key Laboratory of Electrochemical Energy Storage Materials, Fuzhou University, Fuzhou, Fujian, 350116, China.
Abstract:
Herein, a heterostructural hexagonal@tetragonal GeO2 (HT-GeO2 ) composite has been designed based on density functional theory (DFT) calculations and synthesized via an acidic-heating route dealt with rapid cooling, where the inner hexagonal GeO2 (H-GeO2 ) phase is covered by a porous layer of tetragonal GeO2 (T-GeO2 ) owing to HF etching. Interestingly, the HT-GeO2 electrode has a self-optimizing effect in lithium storage induced by heterointerface regulation, where the porous T-GeO2 layer on the surface of HT-GeO2 can act as not only a Li+ /electron conducting layer, but also a buffer layer, while the inner H-GeO2 phase can react preferentially with Li ions owing to lower intercalation energy, which is confirmed by operando XRD measurement contributing to thorough lithiation for HT-GeO2 . Moreover, the heterointerface can enhance the pseudocapacitance effect, which can boost the Li storage and accelerate the discharge-charge process. As a result, a large capacity of 984 mAh g-1 after 500 cycles at 2 A g-1 and a capacity of 430 mAh g-1 at a high current density of 20 A g-1 are delivered. This work provides an easy and efficient way to improve the cycling stability of the GeO2 anode, and the T-GeO2 phase would be a novel anode material in energy storage devices.
More Related Videos
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Trends in Lattice Energy: Ion Size and Charge

