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Updated: Oct 10, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Clustering of metal dopants in defect sites of graphene-based materials
Stephanie Lambie1,2, Krista G Steenbergen3, Nicola Gaston1
1MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Physics, University of Auckland, Private Bag 92019, Auckland, New Zealand. n.gaston@auckland.ac.nz.
Abstract:
Single-atom catalysts are promising candidates for many industrial reactions. However, making true single-atom catalysts is an experimental dilemma, due to the difficulty of keeping dopant single atoms stable at temperature and under pressure. This difficulty can lead to clustering of the metal dopant atoms in defect sites. However, the electronic and geometric structure of sub-nanoscale clusters in single-atom defects has not yet been explored. Furthermore, recent studies have proven sub-nanoscale clusters of dopants in single-atom defect sites can be equally good or better catalysts than their single-atom counterparts. Here, a comprehensive DFT study is undertaken to determine the geometric and electronic structure effects that influence clustering of noble and p-block dopants in C3- and N4-defect sites in graphene-based systems. We find that the defect site is the primary driver in determining clustering dynamics in these systems.
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