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Related Experiment Video

Updated: Oct 10, 2025

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

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Published on: April 4, 2017

Room-temperature single-photon emitters in silicon nitride.

Alexander Senichev^1,2, Zachariah O Martin^1,2, Samuel Peana¹

¹School of Electrical and Computer Engineering, Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN 47906, USA.

Science Advances

|December 10, 2021

Summary

Researchers discovered bright, stable single-photon emitters in silicon nitride (SiN) films at room temperature. These quantum emitters are crucial for developing scalable integrated quantum photonic circuits for quantum technologies.

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Area of Science:

Quantum Information Science
Materials Science

Background:

Single-photon emitters are fundamental for quantum information technology, quantum sensing, and quantum communication.
Scalable photonic platforms are needed for integrated quantum photonic circuits.

Purpose of the Study:

To report the observation of room-temperature single-photon emitters in silicon nitride (SiN) films.
To characterize the photophysical properties of these emitters.

Main Methods:

Growth of silicon nitride films on silicon dioxide substrates.
Photophysical analysis, including second-order autocorrelation measurements.
Luminescence spectroscopy to analyze emission characteristics.

Main Results:

Observation of bright (>10^5 counts/s), stable, and linearly polarized single-photon emission at room temperature.
Achieved a second-order autocorrelation function g^(2)(0) below 0.2, indicating high purity.
Narrow luminescence peak suggests emission from a specific defect center in SiN.

Conclusions:

Silicon nitride films host promising single-photon emitters suitable for room-temperature operation.
These emitters can be integrated into established silicon nitride photonic platforms.
Potential for scalable, low-loss integration of quantum light sources for on-chip quantum circuits.