Deep Well Trapping of Hot Carriers in a Hexagonal Boron Nitride Coating of Polymer Dielectrics

Polymer dielectrics can be cost-effective alternatives to conventional inorganic dielectric materials, but their practical application is critically hindered by their breakdown under high electric fields driven by excited hot charge carriers. Using a joint experiment-simulation approach, we show that a 2D nanocoating of hexagonal boron nitride (hBN) mitigates the damage done by hot carriers, thereby increasing the breakdown strength. Surface potential decay and dielectric breakdown measurements of hBN-coated Kapton show the carrier-trapping effect in the hBN nanocoating, which leads to an increased breakdown strength. Nonadiabatic quantum molecular dynamics simulations demonstrate that hBN layers at the polymer-electrode interfaces can trap hot carriers, elucidating the observed increase in the breakdown field. The trapping of hot carriers is due to a deep potential well formed in the hBN layers at the polymer-electrode interface. Searching for materials with similar deep well potential profiles could lead to a computationally efficient way to design good polymer coatings that can mitigate breakdown.