Large-Area MoS₂ via Colloidal Nanosheet Ink for Integrated Memtransistor

Area of Science:

• Materials Science
• Nanotechnology
• Solid State Physics

Background:

• Two-dimensional transition metal dichalcogenides (TMDs) offer unique electronic and optoelectronic properties.
• Memtransistors, built from TMDs, are promising for multifunctional devices but face fabrication challenges.
• Achieving large-area, high-quality TMDs is crucial for practical device integration.

Purpose of the Study:

• To develop a scalable and effective method for fabricating large-area, high-quality molybdenum disulfide (MoS2) thin films.
• To investigate the properties of MoS2 thin films produced via spray coating for electronic and optoelectronic applications.
• To demonstrate the potential of these MoS2 films in field-effect transistors (FETs) and memtransistors.

Main Methods:

• Fabrication of MoS2 thin films using MoS2 colloidal ink via spray coating.
• Post-sulfurization treatment to enhance film quality.
• Characterization of optical and electrical properties.
• Fabrication and testing of MoS2-based field-effect transistors (FETs) and memtransistors.

Main Results:

• Successful fabrication of large-area, high-quality MoS2 thin films.
• MoS2 FETs exhibited an average on/off ratio of 5 × 10^6 and high electron mobility (10.34 cm^2 V^-1 s^-1).
• MoS2 memtransistors demonstrated stable operation with a high switching ratio, tunable by gate voltage and light.
• Improved film quality attributed to sulfur vacancy healing, recrystallization, and carbon contamination removal.

Conclusions:

• The spray coating method provides a viable route for large-area, high-quality 2D MoS2 film production.
• The fabricated MoS2 films possess excellent properties suitable for advanced electronic and optoelectronic devices.
• This approach paves the way for integrated optoelectronics, multi-level memory, and neuromorphic computing applications using 2D TMDs.