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Highly mobile hot holes in Cs2AgBiBr6 double perovskite
Heng Zhang1, Elke Debroye2, Wenhao Zheng1
1Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
Hot carriers in Cs2AgBiBr6 double perovskite show significantly enhanced mobility, exceeding cold carriers by fourfold. This discovery enables long-range hot carrier transport, crucial for advanced optoelectronics.
Area of Science:
- Materials Science
- Solid-State Physics
- Optoelectronics
Background:
- Efficient hot carrier optoelectronics depend on highly mobile hot charge carriers for long-range transport.
- Carrier-phonon scattering typically hinders hot carrier mobility, making them less mobile than cold carriers.
Purpose of the Study:
- To report and investigate enhanced hot carrier mobility in Cs2AgBiBr6 double perovskite.
- To explore the fundamental mechanisms behind hot carrier transport in this material.
Main Methods:
- Optical pump–infrared push-terahertz probe spectroscopy.
- Frequency-resolved photoconductivity measurements.
Main Results:
- Achieved up to a fourfold enhancement in hot carrier mobility compared to cold carriers.
- Demonstrated long-range hot carrier transport exceeding 200 nm.
- Identified hot holes with reduced momentum scattering as the primary source of conductivity enhancement.
Conclusions:
- Cs2AgBiBr6 exhibits boosted hot carrier mobility due to reduced momentum scattering, enabling (quasi-)ballistic transport.
- This material serves as a promising platform for fundamental studies and applications in hot carrier optoelectronics.
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