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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
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Above-ordering-temperature large anomalous Hall effect in a triangular-lattice magnetic semiconductor.
Masaki Uchida1,2,3, Shin Sato2, Hiroaki Ishizuka1
1Department of Physics, Tokyo Institute of Technology, Tokyo 152-8550, Japan.
Science Advances
|December 22, 2021
Summary
This study reveals that magnetic semiconductor EuAs exhibits a large anomalous Hall effect (AHE) above its ordering temperature, driven by spin cluster scattering. This finding opens new avenues for materials with significant Hall response.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid-State Physics
Background:
- Anomalous Hall effect (AHE) research traditionally focused on intrinsic mechanisms.
- Extrinsic mechanisms, like spin cluster scattering, are theorized to enhance AHE in specific magnetic semiconductors.
Purpose of the Study:
- To investigate the potential of magnetic semiconductors for large AHE beyond intrinsic effects.
- To explore the extrinsic mechanism of spin cluster scattering in inducing AHE.
Main Methods:
- Experimental characterization of the magnetic semiconductor EuAs.
- Measurement of AHE and colossal magnetoresistance.
- Theoretical model calculations to explain observed phenomena.
Main Results:
- EuAs, a novel magnetic semiconductor, displays a significant AHE with an anomalous Hall angle of 0.13.
- Large AHE was observed at temperatures well above the antiferromagnetic ordering point.
- Colossal magnetoresistance was also detected in EuAs.
Conclusions:
- Spin cluster scattering in a hopping regime effectively explains the observed AHE in EuAs.
- EuAs serves as a promising material for studying topological spin textures and AHE.
- Findings support the development of materials with diluted carriers coupled to noncoplanar spin structures for enhanced AHE.
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