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In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy.

A Bucamp¹, C Coinon¹, S Lepilliet¹

¹University of Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, UMR 8520-IEMN, F-59000 Lille, France.

|December 22, 2021

Summary

This study fabricates InGaAs/GaSb heterojunction tunnel diodes using selective area molecular beam epitaxy. Both radial and axial architectures demonstrate negative differential resistance with high peak current densities.

Keywords:

Esaki tunnel diodes in-plane nanowire molecular beam epitaxy selective area growth

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Area of Science:

Materials Science
Nanotechnology
Semiconductor Physics

Background:

In-plane heterojunction tunnel diodes are crucial for advanced electronic devices.
Understanding nanoscale effects on device performance is essential for optimization.

Purpose of the Study:

To fabricate and characterize InGaAs/GaSb heterojunction tunnel diodes using selective area molecular beam epitaxy.
To investigate two distinct architectures: radial nanowires and axial heterojunctions.
To analyze the impact of nanoscale phenomena on diode properties.

Main Methods:

Selective area molecular beam epitaxy (MBE) for fabricating InGaAs/GaSb heterojunctions.
Fabrication of radial InGaAs core/GaSb shell nanowires.
Fabrication of axial InGaAs/GaSb heterojunctions using template-assisted MBE.
Characterization of tunneling properties and negative differential resistance.

Main Results:

Demonstrated successful fabrication of in-plane InGaAs/GaSb heterojunction tunnel diodes.
Unveiled the influence of nanoscale strain relaxation and alloy fluctuations in radial nanowires.
Achieved precise nanoscale control over tunnel diode dimensions in axial heterojunctions via template-assisted MBE.
Observed negative differential resistance with large peak current densities in both architectures.

Conclusions:

Selective area MBE is a viable technique for fabricating high-performance InGaAs/GaSb tunnel diodes.
Nanoscale material properties significantly impact diode performance.
Template-assisted MBE offers scalable, precise control for nanoscale device fabrication.