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Modeling and Simulations of 4H-SiC/6H-SiC/4H-SiC Single Quantum-Well Light Emitting Diode Using Diffusion Bonding

Muhammad Haroon Rashid1, Ants Koel2, Toomas Rang2

  • 1Department of Textile Engineering, National Textile University, Faisalabad 37610, Pakistan.

Micromachines
|December 24, 2021
PubMed
Summary

This study simulates a novel silicon carbide (SiC) light-emitting diode (LED) using diffusion bonding. The simulated 4H-SiC and 6H-SiC LED achieved high luminous efficiency and external quantum efficiency, showing promise for future optoelectronics.

Keywords:
4H-SiC6H-SiCdiffusion bondingdiffusion weldingedge-emitting ledlight-emitting diodequantum wellsilicon carbide

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Optoelectronics

Background:

  • Silicon carbide (SiC) is a promising material for high-frequency electronics and optoelectronics due to its excellent thermal and electrical properties.
  • SiC exists in numerous polytypes, with 3C-SiC, 4H-SiC, and 6H-SiC being the most notable for their distinct characteristics.
  • Elevated temperature processing is often required for SiC-based devices.

Purpose of the Study:

  • To perform physical device simulation of a novel single quantum well (SQW) edge-emitting LED based on 4H-SiC and 6H-SiC layers.
  • To investigate the impact of a novel diffusion welding/bonding technique on LED performance.
  • To evaluate current-voltage characteristics, luminous power, and power spectral density of the simulated SiC LED.

Main Methods:

  • Device simulation using the SILVACO TCAD semiconductor device simulator.
  • Modeling a single quantum well (SQW) edge-emitting LED structure with 4H-SiC and 6H-SiC layers.
  • Analysis of device performance by varying design parameters.

Main Results:

  • The simulated SiC LED demonstrated promising luminous power efficiency (25%) and external quantum efficiency (EQE) of 16.43%.
  • The performance achieved is comparable to existing SQW LEDs.
  • The simulation results indicate the potential for customization of the LED structure for specific wavelength ranges by selecting materials with varying bandgaps.

Conclusions:

  • The proposed diffusion welding/bonding technique for SiC-SiC wafer integration is viable for LED fabrication.
  • The simulated SiC LED exhibits high efficiency, making it a strong candidate for future optoelectronic applications.
  • Further development could lead to cost-effective and efficient SiC-based LEDs for various applications.