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Updated: Oct 9, 2025

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials
Published on: January 5, 2019
High-Yield Production of Selected 2D Materials by Understanding Their Sonication-Assisted Liquid-Phase Exfoliation
Freskida Goni1, Angela Chemelli1, Frank Uhlig1
1Institute of Inorganic Chemistry, Faculty of Technical Chemistry, Chemical and Process Engineering, Biotechnology, Graz University of Technology, Stremayrgasse 9, 8010 Graz, Austria.
Low yields in 2D nanomaterial production via liquid-phase exfoliation (LPE) are due to an equilibrium between exfoliated and flocculated nanosheets. Overcoming this equilibrium significantly boosts yields for graphene, boron nitride nanosheets, and molybdenum disulfide nanosheets.
Area of Science:
- Materials Science
- Nanotechnology
- Chemical Engineering
Background:
- Liquid-phase exfoliation (LPE) is a scalable method for producing 2D nanomaterials.
- Current LPE yields (2-5%) hinder large-scale manufacturing.
- Understanding yield limitations is crucial for process optimization.
Purpose of the Study:
- Investigate the cause of low yields in sonication-assisted LPE.
- Analyze the exfoliation equilibrium of 2D nanomaterials.
- Develop a modified LPE process for high-yield production.
Main Methods:
- Sonication-assisted liquid-phase exfoliation of graphene, boron nitride nanosheets (BNNSs), and molybdenum disulfide nanosheets (MoS2 NS).
- Analysis of the equilibrium between exfoliated and flocculated nanosheets.
- Modification of the LPE process to overcome yield limitations.
Main Results:
- Low yields in LPE are attributed to an exfoliation-flocculation equilibrium.
- This equilibrium limits further nanosheet exfoliation.
- Modified LPE increased yields to 14% (graphene), 44% (BNNSs), and 29% (MoS2 NS).
Conclusions:
- The study identifies a key factor limiting 2D nanomaterial production via LPE.
- A modified LPE process effectively overcomes the exfoliation equilibrium.
- This approach enables high-yield production of graphene, BNNSs, and MoS2 NS.
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