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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Interfacial Electrochemical Methods: Overview

Interfacial Electrochemical Methods: Overview

Interfacial electrochemical methods focus on the phenomena occurring at the boundary between an electrode and a solution, as opposed to bulk methods that concentrate on the solution's overall properties. These interfacial methods are classified as either static or dynamic based on the presence of a nonzero current in the electrochemical cell and the consistency of analyte concentrations. Static methods, such as potentiometry, measure the cell's potential without any significant current...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Related Experiment Video

Updated: Oct 8, 2025

Preparation of Janus Particles and Alternating Current Electrokinetic Measurements with a Rapidly Fabricated Indium Tin Oxide Electrode Array

Preparation of Janus Particles and Alternating Current Electrokinetic Measurements with a Rapidly Fabricated Indium Tin Oxide Electrode Array

Published on: June 23, 2017

Inter-facet junction effects on particulate photoelectrodes.

Xianwen Mao^1,2, Peng Chen³

¹Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY, USA.

Nature Materials

|December 25, 2021

Summary

Anisotropic semiconductor particles create junctions that boost solar energy conversion. Chemical doping and particle size engineering optimize these junctions for improved photoelectrochemical performance.

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Area of Science:

Materials Science
Photocatalysis
Semiconductor Physics

Background:

Particulate semiconductor photocatalysts are crucial for solar energy conversion.
Anisotropically shaped particles can form inter-facet junctions, similar to 2D heterojunctions.

Purpose of the Study:

To investigate inter-facet junction effects in bismuth vanadate (BiVO4) particles.
To understand how near-edge transition zones influence photoelectrochemistry.
To explore chemical doping and particle size effects on performance.

Main Methods:

Subfacet-level multimodal functional imaging.
Analysis of near-edge transition zones.
Facet-size scaling law development.

Main Results:

Identified characteristics of near-edge transition zones crucial for photoelectrochemistry.
Demonstrated that chemical doping modulates transition zone width and performance.
Revealed multiphasic size dependences in photoelectrode performance.

Conclusions:

Inter-facet junctions significantly impact photocatalyst performance.
Chemical doping and particle size engineering are effective strategies for optimization.
The developed framework aids in predicting and engineering properties of faceted semiconductors.