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Updated: Oct 8, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Defect-Interceded Cascading Energy Transfer and Underlying Charge Transfer in Europium-Doped CsPbCl3 Nanocrystals
Ayushi Shukla1, Gurpreet Kaur1, Kaliyamoorthy Justice Babu1
1Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali 140306, Punjab, India.
Abstract:
Rare-earth ion (RE3+) doping in cesium lead chloride (CsPbCl3) has unlocked novel prospects to explore changes in optical, magnetic, and charge carrier transport properties. This leads to a huge advancement in optoelectronic applications, yet deep understanding of the photophysics governing the energy transfer processes is lacking and demands vital attention. Herein, we probe into the mechanistic transfer processes from the band edge of the host (CsPbCl3) to the dopant europium ion (Eu3+) with the aid of femtosecond fluorescence upconversion and transient absorption (TA) spectroscopy. The upconversion measurement portrays a defect-mediated cascading energy transfer from CsPbCl3 to Eu3+ and further cross-relaxation among Eu3+ states. Moreover, TA studies reveal that there is charge transfer from the band edge of CsPbCl3 to doping-induced shallow defect states. Furthermore, two-photon absorption study establishes no compromise in the transfer mechanism even upon bandgap excitation. This work validates that Eu-CsPbCl3 is an apt entrant for optoelectronic applications.
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